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 SMD Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CFRB201 Thru CFRB207
Reverse Voltage: 50 - 1000 Volts Forward Current: 2.0 Amp
Features
Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Fast recovery time: 150 - 500 nS Low leakage current
SMB/DO-214AA
0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06)
0.155(3.94) 0.130(3.30)
Mechanical data
Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.093 gram
0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76)
0.012(0.31) 0.006(0.15)
0.220(5.59) 0.200(5.08)
0.008(0.20) 0.203(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CFRB 201 50 50 35 CFRB 202 100 100 70 CFRB 203 200 200 140 CFRB 204 400 400 280 CFRB 205 600 600 420 CFRB 206 800 800 560 CFRB 207 1000 1000 700
Unit
V V V A
60
Io VF Trr IR R 100
2.0 1.3 250 5.0 50 20 -55 to +150 -55 to +150 500
A V nS uA
JL
C/W C C
Tj TSTG
Note 1: Thermal resistance from junction to lead 8.0x8.0 mm square (0.13mm thick) land area.
MDS0210012B
Page 1
SMD Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CFRB201 Thru CFRB207)
Fig. 1 - Reverse Characteristics
1000
100
Fig.2 - Forward Characteristics
Reverse Current ( uA )
Forward current ( A )
100
Tj=125 C
10
10
1
1.0 Tj=25 C 0.1 0
0.1
Tj=25 C Pulse width 300uS 4% duty cycle
0.01
30
60
90
120
150
0
0.4
0.8
1.2
1.6
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig. 3 - Junction Capacitance
Peak Surge Forward Current ( A )
140 60
Fig. 5 - Non Repetitive Forward Surge Current
8.3mS Single Half Sine Wave JEDEC methode
Junction Capacitance (pF)
120 100 80 60 40 20 0 0.1 1.0 10 100 1000 Tj=25 C f=1.0MHz Vsig=50mV p-p
50 40 30 Tj=25 C 20 10 0
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A
Fig. 6 - Current Derating Curve
2.1
Average Forward Current ( A )
trr
| | | | | | | |
2.4 2.0 1.6 1.2 0.8 0.4 00
(+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
() PULSE GENERATOR (NOTE 2) (+) 0 -0.25A
Single Phase Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0210012B
Page 2


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